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Growth of epitaxial layers of gallium nitride on silicon carbide and corundum substrates

โœ Scribed by D.K. Wickenden; K.R. Faulkner; R.W. Brander; B.J. Isherwood


Publisher
Elsevier Science
Year
1971
Tongue
English
Weight
943 KB
Volume
9
Category
Article
ISSN
0022-0248

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Growth of gallium antimonide epitaxial l
โœ Dr. L. D. Pramatarova; Dr. D. N. Tretjakov ๐Ÿ“‚ Article ๐Ÿ“… 1981 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 347 KB ๐Ÿ‘ 2 views

## Abstract In the present work the possibility is demonstrated of growing gallium antimonide epitaxial layers on indium arsenide substrates using the liquid phase epitaxial (LPE) method. The influence is nivestigated of the growth conditions on the morphology of the surface and interface of the e