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Growth of gallium antimonide epitaxial layers on indium arsenide substrates

โœ Scribed by Dr. L. D. Pramatarova; Dr. D. N. Tretjakov

Publisher
John Wiley and Sons
Year
1981
Tongue
English
Weight
347 KB
Volume
16
Category
Article
ISSN
0232-1300

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โœฆ Synopsis

Abstract

In the present work the possibility is demonstrated of growing gallium antimonide epitaxial layers on indium arsenide substrates using the liquid phase epitaxial (LPE) method.

The influence is nivestigated of the growth conditions on the morphology of the surface and interface of the epitaxial structures InAs๏ฃฟGaSb. The optimum technological regimes for growth of heterostructures in the system InAs๏ฃฟGaSb are found.

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## Abstract The method of GaAs film growth from a solution between two substrates was considered. The calculated thickness as a function of growth temperature and distance between substrates was in a good agreement with experimental results. The investigation of the film roughness as a function o