## Abstract In the present work the possibility is demonstrated of growing gallium antimonide epitaxial layers on indium arsenide substrates using the liquid phase epitaxial (LPE) method. The influence is nivestigated of the growth conditions on the morphology of the surface and interface of the e
Effect of electrical field on growth of gallium arsenide layers from vapour phase
โ Scribed by L. G. Lavrentieva; G. M. Ikonnikova; L. M. Krasilnikova
- Publisher
- John Wiley and Sons
- Year
- 1981
- Tongue
- English
- Weight
- 406 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0232-1300
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
## Abstract The method of GaAs film growth from a solution between two substrates was considered. The calculated thickness as a function of growth temperature and distance between substrates was in a good agreement with experimental results. The investigation of the film roughness as a function o
Growth rates of boric acid have been measured both in the absence and in the presence of electrical field at 1.00 DC voltage as a function of supersaturation in a laboratory-scale fluidized bed crystallizer at the temperature range of 20 ยฐC to 52 ยฐC. The values of overall rate coefficient (K G ), di
## Abstract It is shown in the present work that copper additives influence substantially the growth of Ga crystals from a melt which is expressed in different ways, depending on the impurity concentration. With rising copper concentrations we observed a substantial retarding in the growth rates as