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The growth of gallium arsenide films from a thin solution layer between substrates

✍ Scribed by Yu. B. Bolchovitianov; R. I. Bolchovitianova; P. L. Melnikov

Publisher
John Wiley and Sons
Year
1973
Tongue
English
Weight
460 KB
Volume
8
Category
Article
ISSN
0232-1300

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✦ Synopsis

Abstract

The method of GaAs film growth from a solution between two substrates was considered.

The calculated thickness as a function of growth temperature and distance between substrates was in a good agreement with experimental results.

The investigation of the film roughness as a function of cooling rate, distance between substrates and their orientations was fulfilled.

Electrical properties of the films as a function of substrate orientations in the interval (100)–(111)–(011) were demonstrated. The possibility of application of this method for the investigation of film doping as a function of temperature and growth rate was shown.

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