MOCVD Growth and Characterization of GaN
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Zhang, X. ;Chua, S. J. ;Feng, Z. C. ;Chen, J. ;Lin, J.
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Article
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1999
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John Wiley and Sons
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English
β 169 KB
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GaN thin films have been grown on Si(001) substrate with specially designed composite intermediate layers (CIL) consisting of an ultrathin amorphous silicon layer and a GaN/Al x Ga 1Β± Β±x N multilayered buffer by low pressure metal-organic chemical vapor deposition (MOCVD). The improved film quality