𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The Application of a Low Temperature GaN Buffer Layer to Thick GaN Film Growth on ZnO/Si Substrate

✍ Scribed by Lee, J. W. ;Park, S. W. ;Yoo, J. B.


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
152 KB
Volume
176
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


MOCVD Growth and Characterization of GaN
✍ Zhang, X. ;Chua, S. J. ;Feng, Z. C. ;Chen, J. ;Lin, J. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 169 KB πŸ‘ 2 views

GaN thin films have been grown on Si(001) substrate with specially designed composite intermediate layers (CIL) consisting of an ultrathin amorphous silicon layer and a GaN/Al x Ga 1Β± Β±x N multilayered buffer by low pressure metal-organic chemical vapor deposition (MOCVD). The improved film quality