InSe films are grown at 230-420 β’ C by low-pressure MOCVD from [(tBu) 2 In(Β΅-SetBu)] 2 and [(Me 2 EtC)In(Β΅ 3 -Se)] 4 . Energy-dispersive X-ray analysis shows that films grown from the first precursor are In rich, while those from the second one are stoichiometric InSe. At temperatures Β‘ 330 β’ C ball
β¦ LIBER β¦
ChemInform Abstract: The Growth of Indium Selenide Thin Films from a Novel Asymmetric Dialkyldiselenocarbamate of Indium.
β Scribed by P. O'BRIEN; D. J. OTWAY; J. R. WALSH
- Publisher
- John Wiley and Sons
- Year
- 2010
- Weight
- 26 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0931-7597
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