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Influence of Substrate Surface Polarity on Epitaxial Layer Growth of CuInSe2 on GaAs

✍ Scribed by Dr. B. Schumann; Doz.Dr.sc. H. Neumann; E. Nowak; Doz. Dr. sc. G. Kühn

Publisher
John Wiley and Sons
Year
1981
Tongue
English
Weight
399 KB
Volume
16
Category
Article
ISSN
0232-1300

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## Abstract In the present work the possibility is demonstrated of growing gallium antimonide epitaxial layers on indium arsenide substrates using the liquid phase epitaxial (LPE) method. The influence is nivestigated of the growth conditions on the morphology of the surface and interface of the e