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Influence of substrate orientation on the electrical properties of CuInSe2 epitaxial layers on GaAs substrates

✍ Scribed by Doz. Dr. sc. H. Neumann; Dipl.-Phys. E. Nowak


Publisher
John Wiley and Sons
Year
1983
Tongue
English
Weight
400 KB
Volume
18
Category
Article
ISSN
0232-1300

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The Mechanism as SI GaAs Substrate Influ
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## Abstract It is known that it is possible to grow a semi‐insulating or, at least, a high resistivity GaAs epitaxial layer without doping on an SI GaAs substrate by VPE. The SI substrate is suspected as the originator of the high resistivity intermediate layer and diffusion and/or out‐diffusion ar