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Effects of surface treatments on GaAs substrate–epitaxial layer interfaces

✍ Scribed by Yoichi Mada; Yoshinori Wada


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
131 KB
Volume
83
Category
Article
ISSN
8756-663X

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The effect of high hydrostatic pressure -high temperature treatment on strain state of thin GaAs layers, grown on vicinal (001) Si substrate, misoriented towards [110] with different miscut angles and with two different orientations of GaAs layer in relation to the miscut direction, was investigated