Effect of High Temperature-Pressure on GaAs Layers Grown on Vicinal Si Substrates

✍ Scribed by J. Bak-Misiuk; E. Dynowska; A. Misiuk; M. Calamiotou; A. Kozanecki; J. Domagala; D. Kuristyn; W. Glukhanyuk; A. Georgakilas; J. Trela; J. Adamczewska

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 227 KB
• Volume: 36
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/1521-4079(200110)36:8/10<997::aid-crat997>3.0.co;2-g

✦ Synopsis

The effect of high hydrostatic pressure -high temperature treatment on strain state of thin GaAs layers, grown on vicinal (001) Si substrate, misoriented towards [110] with different miscut angles and with two different orientations of GaAs layer in relation to the miscut direction, was investigated by X-ray diffraction methods. The strain of the GaAs layers and GaAs/Si samples bending decreases when subjected to the treatment at T = 670 K under enhanced hydrostatic pressure (1.2 GPa). Dependence between the stress-induced structural changes and the orientation of GaAs miscut angle as well as peculiarities of the temperature-pressure treatment were determined. It has been shown that the amount of relaxed strain depends on the initial defect structure of the GaAs/Si hetrostructure. After reannealing the samples at higher temperature (870 K -1.2 GPa), the strain and sample bending were the same as that after the treatment at 670 K -1.2 GPa but the defect structure of layers was improved.