𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Study of growth conditions of silicon carbide epitaxial layers

✍ Scribed by M.S. Saidov; Kh.A. Shamuratov; M.A. Kadyrov


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
355 KB
Volume
87
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Epitaxial growth of silicon carbide laye
✍ Dr. Yu. A. Vodakov; E. N. Mokhov; M. G. Ramm; A. D. Roenkov πŸ“‚ Article πŸ“… 1979 πŸ› John Wiley and Sons 🌐 English βš– 826 KB

The growth kinetics of Sic epitaxial layers has been investigated by sublimation sandwichmethod in vacuum a t temperature range from 1600 to 2100 O C . The limiting stages of the crystallization process have been determined. Silicon deficit in the growth cell was shown to result in the great retardi

Optimized growth conditions of GaN epita
✍ Dr. R. Fremunt; P. ČernΓ½; Dr. J. Kohout; Dr. V. RosickΓ‘; Dr. A. BΓΌrger πŸ“‚ Article πŸ“… 1981 πŸ› John Wiley and Sons 🌐 English βš– 586 KB