Studies of growth kinetics and polytypism of silicon carbide epitaxial layers grown from the vapour phase
β Scribed by Yu.M. Tairov; V.F. Tsvetkov; S.K. Lilov; G.K. Safaraliev
- Publisher
- Elsevier Science
- Year
- 1976
- Tongue
- English
- Weight
- 404 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0022-0248
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π SIMILAR VOLUMES
Investigation of the thermal etching (evaporation) of the source material in the process of silicon carbide crystal growth from the vapour phase by the sublimation method has been carried out. It has been established that silicon carbide etching in the temperature interval (2200-2600) "C takes place
The growth kinetics of Sic epitaxial layers has been investigated by sublimation sandwichmethod in vacuum a t temperature range from 1600 to 2100 O C . The limiting stages of the crystallization process have been determined. Silicon deficit in the growth cell was shown to result in the great retardi