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Epitaxial growth of silicon carbide layers by sublimation „sandwich method” (I) growth kinetics in vacuum

✍ Scribed by Dr. Yu. A. Vodakov; E. N. Mokhov; M. G. Ramm; A. D. Roenkov

Publisher
John Wiley and Sons
Year
1979
Tongue
English
Weight
826 KB
Volume
14
Category
Article
ISSN
0232-1300

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✦ Synopsis

The growth kinetics of Sic epitaxial layers has been investigated by sublimation sandwichmethod in vacuum a t temperature range from 1600 to 2100 O C . The limiting stages of the crystallization process have been determined. Silicon deficit in the growth cell was shown to result in the great retarding of Sic epitaxial layers growth due to the decreasing of evaporation coefficient by a factor of 101-102 and more. The impurities introduced into the system at low supersaturations and temperatures, especially rare-earth elements, Al, B, Cr reduce as a rule evaporation and condensation coefficients and therefore the growth rate of epitaxial layers.

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📜 SIMILAR VOLUMES

Epitaxial growth of silicon carbide laye
Epitaxial growth of silicon carbide layers by sublimation “Sandwich method” (II) structural defects and growth mechanism
✍ Dr. E. N. Mokhov; Dr. I. L. Shulpina; A. S. Tregubova; Dr. Yu. A. Vodakov 📂 Article 📅 1981 🏛 John Wiley and Sons 🌐 English ⚖ 705 KB

## Abstract Structural defects of α‐SiC epitaxial layers grown by sublimation “sandwich‐method” in vacuum at the temperatures ranging from 1600 to 2100 °C have been investigated by X‐ray topography and optical microscopy methods. It was shown, that perfect SiC layers with the homogeneous polytype s