Investigation of the thermal etching (evaporation) of the source material in the process of silicon carbide crystal growth from the vapour phase by the sublimation method has been carried out. It has been established that silicon carbide etching in the temperature interval (2200-2600) "C takes place
โฆ LIBER โฆ
Growth of silicon carbide crystals by vapour-liquid-solid (VLS) mechanism in the sublimation method
โ Scribed by Yu.M. Tairov; V.F. Tsvetkov; I.I. Khlebnikov
- Publisher
- Elsevier Science
- Year
- 1973
- Tongue
- English
- Weight
- 684 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0022-0248
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