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Investigation of the role of crystal growth zone during silicon carbide growth by the sublimation method

✍ Scribed by Dr. S. K. Lilov

Publisher
John Wiley and Sons
Year
1994
Tongue
English
Weight
330 KB
Volume
29
Category
Article
ISSN
0232-1300

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✦ Synopsis

The dependence of the growth rate of Sic crystals on the diameter of the graphite crystallization sleeve (GCS) forming the crystal growth zone has been investigated. It has been established that at a given crucible construction there is an exactly determined diameter of (GCS) for growing of Sic crystals with maximum sizes. ~CCJIeAOBaHa 3aBACAMOCTb CKOPOCTA POCTa KpIiCTannOB ~a p 6 u ~a KpeMHAX OT AHaMeTpa rpa@iTo-Boa KpACTaJIJlA3aLWioHHO~ BTyJIKH (TKB) @OPMAPYK)IIJY€O 30HY pOCTa KpACTaJInOB. YCTaHOBneHO, YTO npA AaHHofi KOHCTPYKUAU TIlrnR CyuIeCTByeT TOYHO OIIpeJ(eneHHb1fi AAaMeTp TKB AJIX PoCTd KpHCTaJlJIOB MaKCAManbHbIX pa3MepOB.

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