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Investigation of the thermal conditions during silicon carbide crystal growth

✍ Scribed by Dr. S. K. Lilov

Publisher: John Wiley and Sons
Year: 1994
Tongue: English
Weight: 322 KB
Volume: 29
Category: Article
ISSN: 0232-1300
DOI: 10.1002/crat.2170290118

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✦ Synopsis

In the present work an analysis of the thermal conditions during silicon carbide crystal growth from the vapour phase by the sublimation method is carried out. On the basis of the obtained results from the calculation of the temperature distribution along the length of the growing crystal it was drawn a conclusion that in order to decrease the density of dislocations in the growing crystals it is necessary to decrease the temperature gradients in the crucible for growing.

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