In the present work an analysis of the thermal conditions during silicon carbide crystal growth from the vapour phase by the sublimation method is carried out. On the basis of the obtained results from the calculation of the temperature distribution along the length of the growing crystal it was dra
β¦ LIBER β¦
Growth of Trumpet-Like Protrusions During the CVD of Silicon Carbide Films
β Scribed by Y. Kajikawa; H. Ono; S. Noda; H. Komiyama
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 332 KB
- Volume
- 8
- Category
- Article
- ISSN
- 0948-1907
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