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Growth Mechanism and Chemical Structure of Amorphous Hydrogenated Silicon Carbide (a-SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 1

โœ Scribed by Aleksander M. Wrobel; Agnieszka Walkiewicz-Pietrzykowska; Marja Ahola; I. Juhani Vayrynen; Francisco J. Ferrer-Fernandez; Agustin R. Gonzalez-Elipe

Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
381 KB
Volume
15
Category
Article
ISSN
0948-1907

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