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Investigation of the formation and growth processes of silicon carbide monocrystals

✍ Scribed by Dr. S. K. Lilov


Publisher
John Wiley and Sons
Year
1994
Tongue
English
Weight
352 KB
Volume
29
Category
Article
ISSN
0232-1300

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πŸ“œ SIMILAR VOLUMES


Investigation of nitrogen solubility pro
✍ Dr. S. K. Lilov; Prof. Dr. Yu. N. Tairov; Dr. V. F. Tsvetkov πŸ“‚ Article πŸ“… 1979 πŸ› John Wiley and Sons 🌐 English βš– 274 KB πŸ‘ 1 views

of Physics, Department of Semiconductor8 and Leningrad Order of Lenin Electrical Engineering Institute named &er V. I. Ulyanov (Lenin). Department of Dielectrics and Semiconductors ## Investigation of Nitrogen Solubility Process in Silicon Carbide On the basis of the epitaxial layers of Sic (N) g

Investigation of the thermal conditions
✍ Dr. S. K. Lilov πŸ“‚ Article πŸ“… 1994 πŸ› John Wiley and Sons 🌐 English βš– 322 KB πŸ‘ 1 views

In the present work an analysis of the thermal conditions during silicon carbide crystal growth from the vapour phase by the sublimation method is carried out. On the basis of the obtained results from the calculation of the temperature distribution along the length of the growing crystal it was dra

Investigation of the role of crystal gro
✍ Dr. S. K. Lilov πŸ“‚ Article πŸ“… 1994 πŸ› John Wiley and Sons 🌐 English βš– 330 KB πŸ‘ 1 views

The dependence of the growth rate of Sic crystals on the diameter of the graphite crystallization sleeve (GCS) forming the crystal growth zone has been investigated. It has been established that at a given crucible construction there is an exactly determined diameter of (GCS) for growing of Sic crys

Investigation of the growth processes fr
✍ S. K. Lilov πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 228 KB πŸ‘ 1 views

## Abstract In the present work are presented the results of the thermodynamic analysis of the interaction processes in the system Si‐C‐H‐Cl in the temperature interval 1000‐3000 K. The equilibrium pressures of the components in the system Si‐C‐H‐Cl with taking account the formation of the condense

The formation of silicon carbide films f
✍ Prof. Edwin Hengge; Dr. Arno Zechmann; Dr. Ferdinand Hofer; Dr. Peter PΓΆlt; Dr. πŸ“‚ Article πŸ“… 1994 πŸ› John Wiley and Sons 🌐 English βš– 481 KB πŸ‘ 1 views

The formation of thin silicon carbide films for various uses is of technological intercst but still presents some problems. In many cases. the film produced has an cxccss or deficiency of carbon or silicon.[lJ One reason for this is that the precursor gas generally used is a mixture of several compo