of Physics, Department of Semiconductor8 and Leningrad Order of Lenin Electrical Engineering Institute named &er V. I. Ulyanov (Lenin). Department of Dielectrics and Semiconductors ## Investigation of Nitrogen Solubility Process in Silicon Carbide On the basis of the epitaxial layers of Sic (N) g
Investigation of the formation and growth processes of silicon carbide monocrystals
β Scribed by Dr. S. K. Lilov
- Publisher
- John Wiley and Sons
- Year
- 1994
- Tongue
- English
- Weight
- 352 KB
- Volume
- 29
- Category
- Article
- ISSN
- 0232-1300
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π SIMILAR VOLUMES
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The dependence of the growth rate of Sic crystals on the diameter of the graphite crystallization sleeve (GCS) forming the crystal growth zone has been investigated. It has been established that at a given crucible construction there is an exactly determined diameter of (GCS) for growing of Sic crys
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