of Physics, Department of Semiconductor8 and Leningrad Order of Lenin Electrical Engineering Institute named &er V. I. Ulyanov (Lenin). Department of Dielectrics and Semiconductors
Investigation of Nitrogen Solubility Process in Silicon Carbide
On the basis of the epitaxial layers of Sic (N) grown from vapour phase by the sublimation method in a temperature interval (1900-2200) "C and a t nitrogen partial pressures from 4 to 760 Torr hes been determined the dependence of the nitrogen content in the epitaxial layers of SiC(N) on the nitrogen partial pressure and the temperature of growing.
A thermodynamics analysis of the nitrogen solubility process in silicon carbide has been developed taking account of the electron-hole interaction. The experimental and celculation results, we have obtained, allowed us to determine the partial mol solubility heat of nitrogen in Sic. cy6nu~asu~1 B TeMnepaTypHoM HnTepsane (1900-2200) "C EI napwanbebur nasaemnx aaoTa OT 4 no 760 Top., onpeneneHa B~BBEICEMOCT conepmamrr aao~a B ~~E I T ~K C E ~~J I ~H ~ CJIORX SiC(N) OT napqnanbaoro namemirr a a o ~a EI TeMnepaTypbI rmpammaawn. npo-seneH TepMonuHaMwsecmB manna nposecca pacTBopeHmi aao~a B ~a p 6 ~n e Kpemm c pacsemue p e a y n b ~a ~b ~ ~O ~B O ~E ~J I W onpenenum napmamHan MonbHm TennoTa pam-Ha OCHOBe 3IITHaKCEIaJIbHblX CJIOeB SiC(N)), BbIpa~eHHbIX E 1 3 l"a3OBOt @3β¬d MeTOAOM y ΒΆ&OM 3JleKTpOHHO-~HpO ΒΆHOI+O B3auMOAefiCTBHH. nOJlyW3HHbIe 3KCIIePEIMeHTaJIbHbe E1 BOpeHEI53 830Ta B ~a p 6 ~n e KpeMHUR.