of Physics, Department of Semiconductor8 and Leningrad Order of Lenin Electrical Engineering Institute named &er V. I. Ulyanov (Lenin). Department of Dielectrics and Semiconductors ## Investigation of Nitrogen Solubility Process in Silicon Carbide On the basis of the epitaxial layers of Sic (N) g
Investigation of Aluminium Solubility Process in Silicon Carbide
β Scribed by Dr. S.K. Lilov
- Publisher
- John Wiley and Sons
- Year
- 1982
- Tongue
- English
- Weight
- 202 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0232-1300
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## Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a βFull Textβ option. The original article is trackable v
In the present work an analysis of the thermal conditions during silicon carbide crystal growth from the vapour phase by the sublimation method is carried out. On the basis of the obtained results from the calculation of the temperature distribution along the length of the growing crystal it was dra