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Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide

✍ Scribed by J. A. Powell; D. J. Larkin


Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
647 KB
Volume
202
Category
Article
ISSN
0370-1972

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## Abstract In the present work are presented the results of the thermodynamic analysis of the interaction processes in the system Si‐C‐H‐Cl in the temperature interval 1000‐3000 K. The equilibrium pressures of the components in the system Si‐C‐H‐Cl with taking account the formation of the condense