Study of the evaporation mechanism in silicon carbide crystals growth from vapour phase

✍ Scribed by Dr. S. K. Lilov

• Publisher: John Wiley and Sons
• Year: 1994
• Tongue: English
• Weight: 252 KB
• Volume: 29
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.2170290411

✦ Synopsis

Investigation of the thermal etching (evaporation) of the source material in the process of silicon carbide crystal growth from the vapour phase by the sublimation method has been carried out. It has been established that silicon carbide etching in the temperature interval (2200-2600) "C takes place with the formation of whiskers of evaporation. The mechanism of their formation has been examined and the character of the whisker distribution in the charge of the source silicon carbide has been studied. npOBeneH0 IICCJIenOBaHIIe TePMHYeCKOrO TpaBneHIIR (IICnapeHHia) MCXOnHOrO rap611na KpeMHHR B IIpOUeCCe pOCTa KpIICTannOB ~a p 6 1 1 ~a KpeMHR 8 3 ra30BO8 @3bI MeTOnOM CynJIHMaLWII. YCTaHOBJIeHO, qTO TpaBneHIle r a p 6 ~n a KPeMHIIR B TeMIIepaTypHOM IIHTepBane (2200 -2600) "c IIpHCXOL(HT C 06pa30BaHkfeM YCOB 8cnapeHari. ki3y.iea M ~X ~H I I ~M 06pa30BaHnia YCOB II uccnenoBaH xapar-rep pacnpeneneHm YCOB B 3acb1nre ncxonHoro ~a p 6 8 n a KpeMHm.