Investigation of the thermal etching (evaporation) of the source material in the process of silicon carbide crystal growth from the vapour phase by the sublimation method has been carried out. It has been established that silicon carbide etching in the temperature interval (2200-2600) "C takes place
Study of the growth mechanism in the ADP-type anion-doped crystals
β Scribed by F. M. Alemaykin; A. N. Kogan; T. B. Yudina
- Publisher
- John Wiley and Sons
- Year
- 1988
- Tongue
- English
- Weight
- 419 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0232-1300
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Zirconium-doped KTiOPO 4 (KTP) crystals were grown using a high temperature flux method in the K 2 O-P 2 O 5 -TiO 2 -ZrF 4 system. The dopant content in the single crystals with general composition KTi 1-x Zr x OPO 4 (where x = 0 -0.026) strongly depends on zirconium concentration in the homogeneous
## Abstract Ceriumβdoped lithium gadolinium borate (Li~6~Gd(BO~3~)~3~:Ce) single crystal has been grown by the Czochralski method. Some problems like macro defects and concave growth face were found. The macro defects are suggested to be caused by constitutional supercooling and concave growth face