Crystal growth of zirconium-doped KTiOPO4 crystals in the K2O-P2O5-TiO2-ZrF4 system

✍ Scribed by V. I. Ivanenko; I. V. Zatovsky; N. S. Slobodyanik; P. G. Nagornyi; V. N. Baumer

• Publisher: John Wiley and Sons
• Year: 2008
• Tongue: English
• Weight: 170 KB
• Volume: 43
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.200711097

✦ Synopsis

Zirconium-doped KTiOPO 4 (KTP) crystals were grown using a high temperature flux method in the K 2 O-P 2 O 5 -TiO 2 -ZrF 4 system. The dopant content in the single crystals with general composition KTi 1-x Zr x OPO 4 (where x = 0 -0.026) strongly depends on zirconium concentration in the homogeneous melts. AES-ICP method and X-ray fluorescence analysis were used to determine the composition of the obtained crystals. Phase analyses of the products were performed using the powder XRD. The structures of KTiOPO 4 containing different quantities of Zr were refined on the basis of single crystal XRD data. Applying ZrF 4 precursor for zirconium injection into the flux allowed growing the zirconium-doped KTP crystals at 930-750°С.