The Hgl, single crystal with shiny natural crystal planes, low density of dislocation, and 350 g in weight has been grown by a new technique of modified vapoir phase located point method. The perfection and nuclear spectroscopic performance of the grown crystals are also studied.
Growth of zinc single crystals from the vapour phase in a hydrogen atmosphere
β Scribed by Chr. Nanev; D. Iwanov; D. Nenow
- Publisher
- John Wiley and Sons
- Year
- 1968
- Tongue
- English
- Weight
- 445 KB
- Volume
- 3
- Category
- Article
- ISSN
- 0232-1300
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract Results on ZnSe, ZnSe~__x__~S~1β__x__~ and ZnS crystal growing from the vapour phase up to 7.5 cm^3^ in volume are described. Crystals were grown on sapphire, ZnS, ZnSe~__x__~S~1β__x__~ and quartz glass substrates without a contact of the growing crystal with a growth ampoule and using
An influence of temperature gradient, inert gas pressure and pulling rate on the growth parameters of j3-phthalocyanine single crystals grown in the closed ampoules is investigated. The morphology and structuresensitive properties of B-CuPc crystals grown under different conditions are compared. EP
Investigation of the thermal etching (evaporation) of the source material in the process of silicon carbide crystal growth from the vapour phase by the sublimation method has been carried out. It has been established that silicon carbide etching in the temperature interval (2200-2600) "C takes place