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Thermodynamic study of the solubility process of boron in silicon carbide, grown from the vapour phase

โœ Scribed by S.K. Lilov


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
530 KB
Volume
47
Category
Article
ISSN
0022-3697

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Study of the evaporation mechanism in si
โœ Dr. S. K. Lilov ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 252 KB ๐Ÿ‘ 2 views

Investigation of the thermal etching (evaporation) of the source material in the process of silicon carbide crystal growth from the vapour phase by the sublimation method has been carried out. It has been established that silicon carbide etching in the temperature interval (2200-2600) "C takes place