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Studies of growth processes in silicon carbide epitaxial layers from the vapour phase: II. Thermodynamic analysis of equilibrium in the SiC-H2 system at constant hydrogen pressure

✍ Scribed by S.K. Lilov; Yu.M. Tairov; V.F. Tsvetkov; B.F. Yudin

Publisher: Elsevier Science
Year: 1976
Tongue: English
Weight: 602 KB
Volume: 32
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(76)90029-4

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## Abstract In the present work are presented the results of the thermodynamic analysis of the interaction processes in the system Si‐C‐H‐Cl in the temperature interval 1000‐3000 K. The equilibrium pressures of the components in the system Si‐C‐H‐Cl with taking account the formation of the condense