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Studies of growth processes in silicon carbide epitaxial layers from the vapour phase: II. Thermodynamic analysis of equilibrium in the SiC-H2 system at constant hydrogen pressure

โœ Scribed by S.K. Lilov; Yu.M. Tairov; V.F. Tsvetkov; B.F. Yudin


Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
602 KB
Volume
32
Category
Article
ISSN
0022-0248

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Investigation of the growth processes fr
โœ S. K. Lilov ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 228 KB ๐Ÿ‘ 1 views

## Abstract In the present work are presented the results of the thermodynamic analysis of the interaction processes in the system Siโ€Cโ€Hโ€Cl in the temperature interval 1000โ€3000 K. The equilibrium pressures of the components in the system Siโ€Cโ€Hโ€Cl with taking account the formation of the condense