✦ LIBER ✦

Studies of growth processes from the vapour phase of silicon carbide epitaxial layers: III. Thermodynamics of the high temperature processes in the system SiC-N2 at constant volume

✍ Scribed by S.K. Lilov; Yu.M. Tairov; V.F. Tsvetkov; B.F. Yudin

Publisher: Elsevier Science
Year: 1977
Tongue: English
Weight: 629 KB
Volume: 40
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(77)90031-8

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Studies of growth processes in silicon c

Studies of growth processes in silicon carbide epitaxial layers from the vapour phase: II. Thermodynamic analysis of equilibrium in the SiC-H2 system at constant hydrogen pressure

✍ S.K. Lilov; Yu.M. Tairov; V.F. Tsvetkov; B.F. Yudin 📂 Article 📅 1976 🏛 Elsevier Science 🌐 English ⚖ 602 KB

Investigation of the growth processes fr

Investigation of the growth processes from vapor phase of silicon carbide epitaxial layers: Thermodynamic analysis of the high temperature processes in the system Si-C-H-Cl

✍ S. K. Lilov 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 228 KB 👁 1 views

## Abstract In the present work are presented the results of the thermodynamic analysis of the interaction processes in the system Si‐C‐H‐Cl in the temperature interval 1000‐3000 K. The equilibrium pressures of the components in the system Si‐C‐H‐Cl with taking account the formation of the condense