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Studies of the compensation mechanism in CdTe grown from the vapour phase

✍ Scribed by M. Fiederle; D. Ebling; C. Eiche; P. Hug; W. Joerger; M. Laasch; R. Schwarz; M. Salk; K.W. Benz

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
348 KB
Volume
146
Category
Article
ISSN
0022-0248

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✍ Dr. S. K. Lilov πŸ“‚ Article πŸ“… 1994 πŸ› John Wiley and Sons 🌐 English βš– 252 KB πŸ‘ 2 views

Investigation of the thermal etching (evaporation) of the source material in the process of silicon carbide crystal growth from the vapour phase by the sublimation method has been carried out. It has been established that silicon carbide etching in the temperature interval (2200-2600) "C takes place