Investigations of kinetic and thermal conditions of silicon carbide epitaxial layer growth from the vapour phase
โ Scribed by Yu.M. Tairov; V.F. Tsvetkov
- Publisher
- Elsevier Science
- Year
- 1979
- Tongue
- English
- Weight
- 604 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0022-0248
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๐ SIMILAR VOLUMES
In the present work an analysis of the thermal conditions during silicon carbide crystal growth from the vapour phase by the sublimation method is carried out. On the basis of the obtained results from the calculation of the temperature distribution along the length of the growing crystal it was dra
Investigation of the thermal etching (evaporation) of the source material in the process of silicon carbide crystal growth from the vapour phase by the sublimation method has been carried out. It has been established that silicon carbide etching in the temperature interval (2200-2600) "C takes place