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Optimized growth conditions of GaN epitaxial layers

✍ Scribed by Dr. R. Fremunt; P. Černý; Dr. J. Kohout; Dr. V. Rosická; Dr. A. Bürger

Publisher
John Wiley and Sons
Year
1981
Tongue
English
Weight
586 KB
Volume
16
Category
Article
ISSN
0232-1300

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📜 SIMILAR VOLUMES

Growth of Epitaxial Layers of GaN from G
Growth of Epitaxial Layers of GaN from GaBr3 · 4 NH3 Complex
✍ J. Żytecki; Dr. R. Łappa 📂 Article 📅 1974 🏛 John Wiley and Sons 🌐 English ⚖ 268 KB 👁 1 views

## Abstract A method of obtaining GaN from GaBr~3~ · 4 NH~3~ by radiation heating of the substrate is described. The results of investigations are given concerning the growth rate of polycrystalline GaN layers on [111] oriented silicon substrates in dependence on the changes of the temperature of r