Growth of Epitaxial Layers of GaN from GaBr3 · 4 NH3 Complex

✍ Scribed by J. Żytecki; Dr. R. Łappa

• Publisher: John Wiley and Sons
• Year: 1974
• Tongue: English
• Weight: 268 KB
• Volume: 9
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.19740091003

✦ Synopsis

Abstract

A method of obtaining GaN from GaBr~3~ · 4 NH~3~ by radiation heating of the substrate is described. The results of investigations are given concerning the growth rate of polycrystalline GaN layers on [111] oriented silicon substrates in dependence on the changes of the temperature of reaction, evaporation temperature of GaBr~3~ · 4 NH~3~, and the rate of gas flow. The results of X‐ray investigations and light absorption coefficient are described. Some facts were observed, namely a considerable influence of the nozzle form on the kinetics of the transporting gas stream on the growth rate of GaN, as well as the fact that not the whole complex undergoes pyrolysis on the substrate at temperatures below 500°C.