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Electrical properties of epitaxial GaN grown from GaBr3. 4NH3

✍ Scribed by Doz. Dr. sc. H. Neumann; M. Staudte; Dr. A. Tempel; J. Żytecki; Dr. R. Łappa

Publisher
John Wiley and Sons
Year
1975
Tongue
English
Weight
171 KB
Volume
10
Category
Article
ISSN
0232-1300

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📜 SIMILAR VOLUMES

Growth of Epitaxial Layers of GaN from G
Growth of Epitaxial Layers of GaN from GaBr3 · 4 NH3 Complex
✍ J. Żytecki; Dr. R. Łappa 📂 Article 📅 1974 🏛 John Wiley and Sons 🌐 English ⚖ 268 KB 👁 1 views

## Abstract A method of obtaining GaN from GaBr~3~ · 4 NH~3~ by radiation heating of the substrate is described. The results of investigations are given concerning the growth rate of polycrystalline GaN layers on [111] oriented silicon substrates in dependence on the changes of the temperature of r