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Epitaxial growth and electrical properties of GaN-AlN solid solutions

✍ Scribed by Dr. B. Baranov; Doz. Dr. sc. H. Neumann; Dr. H.-G. Ernst


Publisher
John Wiley and Sons
Year
1977
Tongue
English
Weight
159 KB
Volume
12
Category
Article
ISSN
0232-1300

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πŸ“œ SIMILAR VOLUMES


Growth and electrical properties of epit
✍ Doz. Dr. sc. H. Neumann; Dr. B. Schumann; Dipl.-Phys. D. Peters; Dr. A. Tempel; πŸ“‚ Article πŸ“… 1979 πŸ› John Wiley and Sons 🌐 English βš– 872 KB

A-oriented GaAs substrates by flash evaporation in the substrate temperature range Tsub = 570 ... 870 K. Epitaxialgrowth begins at Tsub = 645 K. The films had always the chalcopyrite structure. Indications to a transition from the chalcopyrite phase to the sphalerite phase were observed at Tsub = 87