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Influence of Growth Temperature and Substrate Material on the Properties of Epitaxial GaN

✍ Scribed by Doz. Dr. H. Neumann; Dr. W. Seifert; M. Staudte; Doz. Dr. A. Zehe

Publisher
John Wiley and Sons
Year
1974
Tongue
English
Weight
193 KB
Volume
9
Category
Article
ISSN
0232-1300

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## Abstract Sexiphenyl thin films were grown by Hot Wall Epitaxy on air‐cleaved mica (001) surfaces at substrate temperatures between 293 K and 440 K. For the entire temperature range, organic thin films show nano‐needle like morphology. The nano‐needles grown at low substrate temperature (293 K) a