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Influence of the GaN Seed Layer and Growth Parameters on Selective Epitaxy of GaN by HVPE

✍ Scribed by Parillaud, O. ;Wagner, V. ;Bühlmann, H. J. ;Ilegems, M.

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
187 KB
Volume
176
Category
Article
ISSN
0031-8965

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