## Abstract A method of obtaining GaN from GaBr~3~ Β· 4 NH~3~ by radiation heating of the substrate is described. The results of investigations are given concerning the growth rate of polycrystalline GaN layers on [111] oriented silicon substrates in dependence on the changes of the temperature of r
β¦ LIBER β¦
Preparation of InN epitaxial layers in InCl3NH3 system
β Scribed by Dr. L. A. Marasina; I. G. Pichugin; M. Tlaczala
- Publisher
- John Wiley and Sons
- Year
- 1977
- Tongue
- English
- Weight
- 276 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0232-1300
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