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Improvement of Structural Properties of GaN Pendeo-Epitaxial Layers

✍ Scribed by Cheong, Hung-Seob ;Hong, Young-Kue ;Hong, Chang-Hee ;Choi, Yoon-Ho ;Leem, Shi-Jong ;Jae Lee, Hyung


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
206 KB
Volume
192
Category
Article
ISSN
0031-8965

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The type and density of threading dislocations in GaN epitaxial layers grown on c-plane sapphire have been analyzed by using nondestructive high resolution X-ray diffraction. The highly distorted GaN layers were described as mosaic crystals characterized by a mean tilt and twist angle between the mo