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Favourable growth conditions of potassium epitaxial layers on tungsten FEM emitter

✍ Scribed by T. Biernat; J. Beben; A. Ciszewski


Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
580 KB
Volume
50
Category
Article
ISSN
0022-0248

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The pre5rllt work shows the tlepentlence of surface iiiorphology of thc GaSb and AI,Gal -zSb epitaxial layers on the conditions of LPE growth. It is found that for LPE growth at 500 " C a siipersaturation of 5 -1 0 "C and a cooling rate of 0.24-0.4 "C/min for GaSb epitaxial layers and 0.8-1.2 "C/rni