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The dependence of surface morphology of GaSb- and AlxGa1–xSb epitaxial layers on the conditions of LPE growth

✍ Scribed by I. M. Yordanova; Dr. L. D. Pramatarova

Publisher
John Wiley and Sons
Year
1983
Tongue
English
Weight
499 KB
Volume
18
Category
Article
ISSN
0232-1300

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✦ Synopsis

The pre5rllt work shows the tlepentlence of surface iiiorphology of thc GaSb and AI,Gal -zSb epitaxial layers on the conditions of LPE growth. It is found that for LPE growth at 500 " C a siipersaturation of 5 -1 0 "C and a cooling rate of 0.24-0.4 "C/min for GaSb epitaxial layers and 0.8-1.2 "C/rnin for Al,GaI-.Sh epitaxial layers is necessary to obtain a flat and smooth surfacp. B HacToRUeir paBoTe n o ~a a a ~a ~~B I I C ~I M O C T ~ 11oBepxiiocmofi hIop+onormi ~~I I T ~K -

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