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Lateral Epitaxial Overgrowth of GaN and Its Crystallographic Tilt Depending on the Growth Condition

โœ Scribed by Song, Y.H. ;Choi, S.C. ;Choi, J.Y. ;Yang, J.W. ;Yang, G.M.


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
97 KB
Volume
180
Category
Article
ISSN
0031-8965

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โœ I. M. Yordanova; Dr. L. D. Pramatarova ๐Ÿ“‚ Article ๐Ÿ“… 1983 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 499 KB ๐Ÿ‘ 2 views

The pre5rllt work shows the tlepentlence of surface iiiorphology of thc GaSb and AI,Gal -zSb epitaxial layers on the conditions of LPE growth. It is found that for LPE growth at 500 " C a siipersaturation of 5 -1 0 "C and a cooling rate of 0.24-0.4 "C/min for GaSb epitaxial layers and 0.8-1.2 "C/rni