✦ LIBER ✦

Lateral Epitaxial Overgrowth of GaN and Its Crystallographic Tilt Depending on the Growth Condition

✍ Scribed by Song, Y.H. ;Choi, S.C. ;Choi, J.Y. ;Yang, J.W. ;Yang, G.M.

Publisher: John Wiley and Sons
Year: 2000
Tongue: English
Weight: 97 KB
Volume: 180
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200007)180:1<247::aid-pssa247>3.0.co;2-n

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Influence of Ambient Gas on the Epitaxia

Influence of Ambient Gas on the Epitaxial Lateral Overgrowth of GaN by Metalorganic Vapor Phase Epitaxy

✍ Kawaguchi, Y. ;Nambu, S. ;Yamaguchi, M. ;Sawaki, N. ;Miyake, H. ;Hiramatsu, K. ; 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 258 KB 👁 2 views

The dependence of surface morphology of

The dependence of surface morphology of GaSb- and AlxGa1–xSb epitaxial layers on the conditions of LPE growth

✍ I. M. Yordanova; Dr. L. D. Pramatarova 📂 Article 📅 1983 🏛 John Wiley and Sons 🌐 English ⚖ 499 KB 👁 2 views

The pre5rllt work shows the tlepentlence of surface iiiorphology of thc GaSb and AI,Gal -zSb epitaxial layers on the conditions of LPE growth. It is found that for LPE growth at 500 " C a siipersaturation of 5 -1 0 "C and a cooling rate of 0.24-0.4 "C/min for GaSb epitaxial layers and 0.8-1.2 "C/rni