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The epitaxial growth of gallium arsenide using triethylarsine

✍ Scribed by T Maeda; M Hata; Y Zempo; N Fukuhara; Y Matsuda; K Sawara

Publisher
John Wiley and Sons
Year
1989
Tongue
English
Weight
387 KB
Volume
3
Category
Article
ISSN
0268-2605

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✦ Synopsis

The thermal decomposition of triethylarsine (TEAS) has been studied. It decomposes at a lower temperature than arsine (AsH3). The decomposition proceeds via a radical process at a temperature above 700Β°C. Epitaxial growth using TEAs has been investigated. A gallium arsenide (GaAs) layer with good morphology was obtained, but the layer was found to contain a considerable amount of carbon impurity originating from TEAs. The use of TEAs with 10% AsH3 or with 20% ammonia (NH3) apparently improves the quality of GaAs layer. A possible scheme for reducing carbon incorporation is discussed.

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