𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The epitaxial growth of AlGaAs using highly purified trimethylaluminum

✍ Scribed by T Maeda; M Hata; M Isemura; T Yako

Publisher
John Wiley and Sons
Year
1991
Tongue
English
Weight
364 KB
Volume
5
Category
Article
ISSN
0268-2605

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

The epitaxial growth of gallium arsenide
The epitaxial growth of gallium arsenide using triethylarsine
✍ T Maeda; M Hata; Y Zempo; N Fukuhara; Y Matsuda; K Sawara πŸ“‚ Article πŸ“… 1989 πŸ› John Wiley and Sons 🌐 English βš– 387 KB

The thermal decomposition of triethylarsine (TEAS) has been studied. It decomposes at a lower temperature than arsine (AsH3). The decomposition proceeds via a radical process at a temperature above 700Β°C. Epitaxial growth using TEAs has been investigated. A gallium arsenide (GaAs) layer with good mo

The Growth of GaN Using Plasma Assisted
The Growth of GaN Using Plasma Assisted Metalorganic Vapour Phase Epitaxy
✍ Campion, R.P. ;Li, T. ;Foxon, C.T. ;Harrison, I. πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 96 KB πŸ‘ 2 views

Conventional metalorganic vapour phase epitaxy (MOVPE) has been very successful in providing high quality GaN films, however, the growth takes place at high temperature and thus requires large flow rates of high purity ammonia. In order to avoid such high and costly use of ammonia, we have developed

Epitaxial and graphoepitaxial growth of
Epitaxial and graphoepitaxial growth of isotactic polypropylene (iPP) from the melt on highly oriented high density polyethylene (HDPE) substrates
✍ Shouke Yan; Frank Katzenberg; JΓΌrgen Petermann πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 288 KB πŸ‘ 2 views

Although under normal conditions only the crystallization behavior of PE on oriented iPP substrates can be studied due to the higher melting point of iPP, the faster crystallization rate of a molten, oriented HDPE film compared to a nonoriented iPP layer was used to study the crystallization of iPP