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Molecular beam epitaxy of gallium arsenide on 0.3°-misoriented epitaxial Si substrates

✍ Scribed by Wu-Yih Uen; Tatsuya Ohori; Tatau Nishinaga


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
443 KB
Volume
156
Category
Article
ISSN
0022-0248

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## Abstract In the present work the possibility is demonstrated of growing gallium antimonide epitaxial layers on indium arsenide substrates using the liquid phase epitaxial (LPE) method. The influence is nivestigated of the growth conditions on the morphology of the surface and interface of the e