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Growth temperature dependence in molecular beam epitaxy of gallium arsenide

โœ Scribed by T. Murotani; T. Shimanoe; S. Mitsui

Publisher
Elsevier Science
Year
1978
Tongue
English
Weight
637 KB
Volume
45
Category
Article
ISSN
0022-0248

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โœ Dietrich R. T. Zahn; Andreas Schneider; Dietrich Drews ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 243 KB ๐Ÿ‘ 2 views

Raman spectroscopy was applied to monitor the growth of GaN at temperatures around 600 ร„C without interrupting the growth process. GaN was deposited on GaAs(100) and Si(111) substrates by molecular beam epitaxy using elemental Ga and atomic nitrogen provided by an r.f. plasma source. Sufficient sign