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Surface morphology of photo-assisted chemical beam epitaxial growth of gallium arsenide

โœ Scribed by T. Farrell; J.V. Armstrong; T.J. Bullough; R. Beanland; T.B. Joyce; P.J. Goodhew


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
253 KB
Volume
127
Category
Article
ISSN
0022-0248

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Surface hydrogen and growth mechanisms are investigated for synchrotron radiation (SR)assisted gas source molecular beam epitaxy (SR-GSMBE) using Si 2 H 6 on the Si(100) surface in the low-temperature region. The surface silicon hydrides (deuterides) are monitored in situ during the epitaxial growth