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Photo-assisted growth of gallium arsenide

✍ Scribed by A.W. Vere; D.C. Rodway; K.J. Mackey; P.C. Smith; P.K. Moores


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
850 KB
Volume
121
Category
Article
ISSN
0022-0248

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The epitaxial growth of gallium arsenide
✍ T Maeda; M Hata; Y Zempo; N Fukuhara; Y Matsuda; K Sawara πŸ“‚ Article πŸ“… 1989 πŸ› John Wiley and Sons 🌐 English βš– 387 KB

The thermal decomposition of triethylarsine (TEAS) has been studied. It decomposes at a lower temperature than arsine (AsH3). The decomposition proceeds via a radical process at a temperature above 700Β°C. Epitaxial growth using TEAs has been investigated. A gallium arsenide (GaAs) layer with good mo