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Growth and aluminium doping of MBE cadmium telluride on gallium arsenide

โœ Scribed by D.E. Ashenford; J.D. Medland; L. Edwards-Shea; A.D. Page; C.E.C. Wood

Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
57 KB
Volume
81
Category
Article
ISSN
0022-0248

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โœ Dr. L. D. Pramatarova; Dr. D. N. Tretjakov ๐Ÿ“‚ Article ๐Ÿ“… 1981 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 347 KB ๐Ÿ‘ 2 views

## Abstract In the present work the possibility is demonstrated of growing gallium antimonide epitaxial layers on indium arsenide substrates using the liquid phase epitaxial (LPE) method. The influence is nivestigated of the growth conditions on the morphology of the surface and interface of the e