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The energy dependence of excessive vacancies created by high energy Si+ ion implantation in Si

โœ Scribed by Lin Shao; Michael Nastasi; Phillip E. Thompson; Irene Rusakova; Quark Y. Chen; Jiarui Liu; Wei-Kan Chu


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
183 KB
Volume
242
Category
Article
ISSN
0168-583X

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Estimation of nitrogen ion energy calcul
โœ T. Tanaka; S. Watanabe; T. Takagi ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 152 KB

Plasma-based ion implantation (PBII) using N 2 gas is examined as a sterilization technique for three-dimensional targets. The application of a pulsed negative voltage (5 ls pulse width, 300 pulses/s, ร€800 V to ร€13 kV) at an N 2 gas pressure of 2.4 Pa is shown to reduce the number of Bacillus pumilu